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SolarCellScan 100

Solar Cell Quantum Efficiency ——SolarCellScan100

Solar Cell Quantum Efficiency (QE)

The Solar Cell Scan 100 series is a multifunctionalexperimental platform,which is based on the measurement of Quantum Efficiency (QE) . The system employs a turnkey integrated design, which can carry out QE, Reflectivity and Mapping testing functions automatically. There are also modular and custom
designed accessories to adapt to different solar cell samples.

Basic System Functions:
Spectral responsivity, internal quantum efficiency, external quantum efficiency,reflectivity,
transmissivity,short circuit current density, QE-mapping andreflectivity-mapping.

Measurements can be made on a wide range of solar cell materials, such as:Monocrystal silicon, polycrystalline silicon, α-Si, GaAs, GaInP, InP, Ge, CdTe,CIS, CIGS, DSSC, Organic Solar Cell, Polymer Solar Cell.
In addition the system is also applicable for a variety of solar cell structures,for example: Single junction, multi-junction, HIT, thin film, HPV and so on.

Basic System Features
1. Full spectrum sunlight simulation, optional double light sources, high-light intensity, and high-stability.
The system conforms to the IEC 60904 standard and has dual light sources using the Xenon and Tungsten-Halogen lamp to cover the whole spectrum.For different wavelength range, choose the right light source to complete QE measurement. The output light intensity from these lamps remain stable over time to ensure a high level of repeatability in the measurement.

System Features:
Consistent with IEC 60904-8 international
High Repeatability
Highly automatized measurement
Optional double light path intensity
monitoring function
Fast Mapping function 20pts/s
Import experiment method files quickly

2. Optical monitoring system Each light source and optical path is monitored by a high precision detector system that significantly improves the overall system optical stability.


3. Fast Mapping function
1) QE Mapping
2) Reflectivity Mapping
This function is mainly for a cell area of more than 100x100 mm. The user could
obtain the minority carrier diffusion length and defect distribution information.


  The picture on the left shows the result of IQE
mapping of a 6” mono-crystaline silicon
photocell. In the top right corner is an area of the
cell of much lower IQE. Such a defect is clearly
visible in the mapped result but impossible to
detect using normal visual techniques.
  The picture on the left shows the reflectivity
map from the same mono-crystaline silicon cell
The picture demonstrates that the cell has
significant non-uniformity. The reason for the
non-uniformity is due to residual acid left on the
cell effecting the reflectivity.

The above three Mapping data sets are obtained from the one cell at 400 nm, 650 nm and 950 nm wavelength by scanning QE (LBIC). For the 650 nm and 950 nm maps, the QE data shows that the cell uniformity is better than at 400 nm. For the 400 nm data, the sample uniformity is obviously bad around the edge. By using different wavelengths of light the user can prove different incident depths within the silicon cell. The longer the incident light wavelength the further into the silicon cell the light will penetrate thus allowing depth profiling and examination of the inner depths of cells.

4.Software interface
The Solar Cell Scan utilises a single windows interface in which all device parameters can be set.All control parameters can be saved as method files and reloaded at any time to restore the measurement conditions. These method files can also be transferred between instruments to allow experiment replication. Measured and processed data can be saved and exported in text, Excel or other formats for processing user supplied programmes.

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